Jump to content

Applied materials, inc. (20240420950). DENSIFIED SEAM-FREE SILICON-CONTAINING MATERIAL GAP FILL PROCESSES

From WikiPatents
Revision as of 06:48, 19 December 2024 by Unknown user (talk) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)

DENSIFIED SEAM-FREE SILICON-CONTAINING MATERIAL GAP FILL PROCESSES

Organization Name

applied materials, inc.

Inventor(s)

Xiang Ji of Cupertino CA (US)

Shuchi Sunil Ojha of Sunnyvale CA (US)

Praket Prakash Jha of San Jose CA (US)

Jingmei Liang of San Jose CA (US)

DENSIFIED SEAM-FREE SILICON-CONTAINING MATERIAL GAP FILL PROCESSES

This abstract first appeared for US patent application 20240420950 titled 'DENSIFIED SEAM-FREE SILICON-CONTAINING MATERIAL GAP FILL PROCESSES



Original Abstract Submitted

exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. a substrate may be housed in the processing region. the substrate may define a feature. the methods may include forming plasma effluents of the silicon-containing precursor and depositing a silicon-containing material on the substrate. the methods may include providing a hydrogen-containing precursor to the processing region, forming plasma effluents of the hydrogen-containing precursor, and etching the silicon-containing material from a sidewall of the feature.

(Ad) Transform your business with AI in minutes, not months

Custom AI strategy for your specific industry
Step-by-step implementation with clear ROI
5-minute setup - no technical skills needed
Get your AI playbook
Cookies help us deliver our services. By using our services, you agree to our use of cookies.