Applied materials, inc. (20240420950). DENSIFIED SEAM-FREE SILICON-CONTAINING MATERIAL GAP FILL PROCESSES
DENSIFIED SEAM-FREE SILICON-CONTAINING MATERIAL GAP FILL PROCESSES
Organization Name
Inventor(s)
Shuchi Sunil Ojha of Sunnyvale CA (US)
Praket Prakash Jha of San Jose CA (US)
Jingmei Liang of San Jose CA (US)
DENSIFIED SEAM-FREE SILICON-CONTAINING MATERIAL GAP FILL PROCESSES
This abstract first appeared for US patent application 20240420950 titled 'DENSIFIED SEAM-FREE SILICON-CONTAINING MATERIAL GAP FILL PROCESSES
Original Abstract Submitted
exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. a substrate may be housed in the processing region. the substrate may define a feature. the methods may include forming plasma effluents of the silicon-containing precursor and depositing a silicon-containing material on the substrate. the methods may include providing a hydrogen-containing precursor to the processing region, forming plasma effluents of the hydrogen-containing precursor, and etching the silicon-containing material from a sidewall of the feature.
