Taiwan semiconductor manufacturing company, ltd. (20240379460). INTERCONNECT STRUCTURE FOR FIN-LIKE FIELD EFFECT TRANSISTOR simplified abstract

INTERCONNECT STRUCTURE FOR FIN-LIKE FIELD EFFECT TRANSISTOR

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jhon Jhy Liaw of Hsinchu County (TW)

INTERCONNECT STRUCTURE FOR FIN-LIKE FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379460 titled 'INTERCONNECT STRUCTURE FOR FIN-LIKE FIELD EFFECT TRANSISTOR

The abstract of this patent application describes interconnect structures and formation techniques for fin-like field effect transistors (FinFETs). An exemplary interconnect structure for a FinFET includes a gate node via electrically coupled to the gate, a source node via electrically coupled to the source, and a drain node via electrically coupled to the drain. The source node via dimension ratio is greater than the drain node via dimension ratio, with the source node via dimension ratio being greater than 2 and the drain node via dimension ratio being less than 1.2.

• Gate node via electrically coupled to the gate of the FinFET
• Source node via electrically coupled to the source of the FinFET
• Drain node via electrically coupled to the drain of the FinFET
• Source node via dimension ratio greater than drain node via dimension ratio
• Source node via dimension ratio greater than 2 and drain node via dimension ratio less than 1.2

Potential Applications: - Semiconductor industry for advanced transistor technology - Integrated circuits for high-performance computing - Mobile devices for improved power efficiency

Problems Solved: - Enhanced performance and efficiency of FinFETs - Improved interconnect structures for better functionality - Optimization of transistor design for various applications

Benefits: - Higher speed and lower power consumption in electronic devices - Increased reliability and durability of integrated circuits - Potential for smaller and more efficient electronic devices

Commercial Applications: Title: Advanced Interconnect Structures for FinFETs in Semiconductor Industry This technology can be used in the production of high-performance processors, memory chips, and other semiconductor devices. The market implications include faster and more energy-efficient electronic devices, leading to improved consumer electronics and industrial applications.

Questions about FinFET Interconnect Structures: 1. How do the source node via dimension ratio and drain node via dimension ratio impact the performance of FinFETs? 2. What are the key advantages of using advanced interconnect structures in semiconductor devices?

Frequently Updated Research: Ongoing research focuses on further optimizing the design and fabrication processes of FinFET interconnect structures to enhance the overall performance and efficiency of semiconductor devices.

Original Abstract Submitted

interconnect structures and corresponding formation techniques for fin-like field effect transistors (finfets) are disclosed herein. an exemplary interconnect structure for a finfet includes a gate node via electrically coupled to a gate of the finfet, a source node via electrically coupled to a source of the finfet, and a drain node via electrically coupled to a drain of the finfet. a source node via dimension ratio defines a longest dimension of the source node via relative to a shortest dimension of the source node via, and a drain node via dimension ratio defines a longest dimension of the drain node via relative to a shortest dimension of the drain node via. the source node via dimension ratio is greater than the drain node via dimension ratio. in some implementations, the source node via dimension ratio is greater than 2, and the drain node via dimension ratio is less than 1.2.