Taiwan semiconductor manufacturing company, ltd. (20240379454). Source/Drain Regions and Methods of Forming Same simplified abstract
Contents
Source/Drain Regions and Methods of Forming Same
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Source/Drain Regions and Methods of Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379454 titled 'Source/Drain Regions and Methods of Forming Same
The method described in the patent application involves etching recesses adjacent dummy gate stacks and fins, followed by epitaxially growing epitaxy regions in the recesses. A metal-comprising mask is deposited over the dummy gate stacks, epitaxy regions, and recesses, then patterned to expose specific areas. Additional epitaxy regions are grown in the recesses before removing the remaining portions of the metal-comprising mask.
- Etching recesses adjacent dummy gate stacks and fins
- Epitaxially growing epitaxy regions in the recesses
- Depositing and patterning a metal-comprising mask
- Growing additional epitaxy regions in the recesses
- Removing remaining portions of the metal-comprising mask
Potential Applications: - Semiconductor manufacturing - Nanotechnology research - Advanced electronic devices
Problems Solved: - Enhancing the performance of semiconductor devices - Improving the efficiency of manufacturing processes
Benefits: - Increased device performance - Enhanced manufacturing capabilities - Potential for smaller and more efficient electronic devices
Commercial Applications: Title: Advanced Semiconductor Manufacturing Process This technology could revolutionize the semiconductor industry by enabling the production of more advanced and efficient electronic devices. The market implications include faster and more powerful devices for various applications, from consumer electronics to industrial equipment.
Questions about the technology: 1. How does this method improve the performance of semiconductor devices? 2. What are the potential challenges in implementing this advanced manufacturing process?
Original Abstract Submitted
a method includes etching a first recess adjacent a first dummy gate stack and a first fin; etching a second recess adjacent a second dummy gate stack and a second fin; and epitaxially growing a first epitaxy region in the first recess. the method further includes depositing a first metal-comprising mask over the first dummy gate stack, over the second dummy gate stack, over the first epitaxy region in the first recess, and in the second recess; patterning the first metal-comprising mask to expose the first dummy gate stack and the first epitaxy region; epitaxially growing a second epitaxy region in the first recess over the first epitaxy region; and after epitaxially growing the second epitaxy region, removing remaining portions of the first metal-comprising mask.
