Taiwan semiconductor manufacturing company, ltd. (20240379356). INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING simplified abstract
Contents
- 1 INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Semiconductor Device Manufacturing
- 1.13 Original Abstract Submitted
INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379356 titled 'INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING
Simplified Explanation
The patent application describes a method of forming a semiconductor device by removing light-sensitive material from a workpiece using polarized electromagnetic radiation and annealing features on the workpiece with different polarized electromagnetic radiation.
- Light-sensitive material is removed using polarized electromagnetic radiation.
- Features on the workpiece are annealed using differently polarized electromagnetic radiation.
- In some cases, non-polarized electromagnetic radiation is used for annealing.
- Exhausting the removed light-sensitive material prevents it from depositing on chamber surfaces.
Key Features and Innovation
- Utilization of polarized electromagnetic radiation for material removal and feature annealing.
- Prevention of light-sensitive material deposition on chamber surfaces.
- Differently polarized radiation for annealing features.
- Potential improvement in semiconductor device manufacturing processes.
Potential Applications
The technology can be applied in the semiconductor industry for the production of advanced semiconductor devices with precise features and reduced contamination risks.
Problems Solved
The method addresses the challenges of removing light-sensitive material and annealing features on a workpiece without causing contamination or unwanted depositions.
Benefits
- Enhanced precision in semiconductor device manufacturing.
- Reduced risk of contamination in the production process.
- Improved efficiency and quality of semiconductor devices.
Commercial Applications
- Semiconductor manufacturing companies can utilize this technology to enhance their production processes and produce high-quality semiconductor devices for various applications in electronics.
Prior Art
Readers can explore prior patents related to semiconductor device manufacturing processes, material removal techniques, and feature annealing methods to understand the evolution of the technology.
Frequently Updated Research
Stay updated on advancements in semiconductor manufacturing processes, material removal technologies, and feature annealing methods to incorporate the latest innovations into semiconductor device production.
Questions about Semiconductor Device Manufacturing
How does polarized electromagnetic radiation improve semiconductor device manufacturing processes?
Polarized electromagnetic radiation helps in precise material removal and feature annealing, leading to enhanced quality and efficiency in semiconductor device production.
What are the potential implications of preventing light-sensitive material deposition on chamber surfaces?
Preventing light-sensitive material deposition reduces contamination risks, ensuring cleaner and more reliable semiconductor manufacturing environments.
Original Abstract Submitted
a method of forming a semiconductor device includes removing a light-sensitive material from a workpiece utilizing polarized electromagnetic radiation and annealing features on the workpiece utilizing electromagnetic radiation polarized in a different direction than the polarized electromagnetic radiation utilized to remove the light-sensitive material. in some embodiments, the electromagnetic radiation used to anneal the features on the workpiece is not polarized. in some described embodiments, light-sensitive material removed from the workpiece is exhausted from the chamber in which the light-sensitive removal process is carried out before it can deposit on surfaces of the chamber.
