Jump to content

Taiwan semiconductor manufacturing company, ltd. (20240379355). INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING simplified abstract

From WikiPatents
Revision as of 06:51, 21 November 2024 by Unknown user (talk) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)

INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Tz-Shian Chen of Hsinchu (TW)

Li-Ting Wang of Hsinchu (TW)

Yee-Chia Yeo of Hsinchu (TW)

INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379355 titled 'INTEGRATED PHOTORESIST REMOVAL AND LASER ANNEALING

The method described in the patent application involves using polarized electromagnetic radiation to remove a light-sensitive material from a workpiece, followed by annealing features on the workpiece using electromagnetic radiation polarized in a different direction. In some cases, the radiation used for annealing is not polarized. Additionally, the removed light-sensitive material is exhausted from the chamber to prevent deposition on chamber surfaces.

  • Utilizes polarized electromagnetic radiation for material removal and annealing
  • Prevents deposition of removed material on chamber surfaces
  • Offers a method for efficient semiconductor device fabrication
  • Provides a novel approach to processing workpieces in a controlled environment
  • Enhances the quality and reliability of semiconductor devices

Potential Applications: - Semiconductor manufacturing - Electronics industry - Research and development in materials science

Problems Solved: - Efficient removal of light-sensitive materials - Preventing contamination of chamber surfaces - Enhancing semiconductor device performance and reliability

Benefits: - Improved process control and precision - Reduced risk of contamination - Enhanced device quality and performance

Commercial Applications: Title: Advanced Semiconductor Device Fabrication Method This technology could revolutionize the semiconductor manufacturing industry by offering a more precise and efficient method for processing workpieces. It has the potential to improve the quality and reliability of semiconductor devices, leading to advancements in various electronic applications.

Questions about the technology: 1. How does the use of polarized electromagnetic radiation improve the semiconductor device fabrication process? 2. What are the potential cost savings associated with this innovative method?


Original Abstract Submitted

a method of forming a semiconductor device includes removing a light-sensitive material from a workpiece utilizing polarized electromagnetic radiation and annealing features on the workpiece utilizing electromagnetic radiation polarized in a different direction than the polarized electromagnetic radiation utilized to remove the light-sensitive material. in some embodiments, the electromagnetic radiation used to anneal the features on the workpiece is not polarized. in some described embodiments, light-sensitive material removed from the workpiece is exhausted from the chamber in which the light-sensitive removal process is carried out before it can deposit on surfaces of the chamber.

(Ad) Transform your business with AI in minutes, not months

Custom AI strategy tailored to your specific industry needs
Step-by-step implementation with measurable ROI
5-minute setup that requires zero technical skills
Get your AI playbook

Trusted by 1,000+ companies worldwide

Cookies help us deliver our services. By using our services, you agree to our use of cookies.