Taiwan semiconductor manufacturing company, ltd. (20240377732). PHOTORESIST FOR SEMICONDUCTOR FABRICATION simplified abstract
Contents
PHOTORESIST FOR SEMICONDUCTOR FABRICATION
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chih-Cheng Liu of Hsinchu (TW)
Jr-Hung Li of Hsinchu County (TW)
Chi-Ming Yang of Hsinchu City (TW)
PHOTORESIST FOR SEMICONDUCTOR FABRICATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240377732 titled 'PHOTORESIST FOR SEMICONDUCTOR FABRICATION
Simplified Explanation: The patent application provides an organometallic precursor for extreme ultraviolet (EUV) lithography, with a chemical formula of MxL, where M is a metal, x is a multidentate aromatic ligand containing specific nitrogen atoms, L is an EUV cleavable ligand, and a, b, and c are specific numerical values.
- Key Features and Innovation:
- Organometallic precursor for EUV lithography
- Multidentate aromatic ligand with specific nitrogen atoms
- EUV cleavable ligand for precise lithography
- Specific numerical values for a, b, and c
Potential Applications: The technology can be used in the semiconductor industry for advanced lithography processes, specifically in EUV lithography for high-resolution patterning.
Problems Solved: The technology addresses the need for precise and efficient lithography processes in the semiconductor industry, particularly in extreme ultraviolet lithography.
Benefits:
- Enhanced precision in lithography processes
- Improved resolution in patterning
- Increased efficiency in semiconductor manufacturing
Commercial Applications: The technology can be applied in semiconductor manufacturing companies for advanced lithography processes, potentially improving production efficiency and quality.
Prior Art: Readers can explore prior research on organometallic precursors for lithography processes, as well as advancements in EUV lithography technology.
Frequently Updated Research: Stay updated on the latest advancements in organometallic precursors for lithography processes, as well as developments in EUV lithography technology.
Questions about Organometallic Precursors for EUV Lithography: 1. What are the specific benefits of using an organometallic precursor in EUV lithography? 2. How does the multidentate aromatic ligand contribute to the efficiency of the lithography process?
Original Abstract Submitted
an organometallic precursor for extreme ultraviolet (euv) lithography is provided. an organometallic precursor includes a chemical formula of mxl, where m is a metal, x is a multidentate aromatic ligand that includes a pyrrole-like nitrogen and a pyridine-like nitrogen, l is an extreme ultraviolet (euv) cleavable ligand, a is between 1 and 2, b is equal to or greater than 1, and c is equal to or greater than 1.
