18412793. SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER
Organization Name
Inventor(s)
Seunggeol Nam of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18412793 titled 'SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER
The semiconductor device described in the abstract includes a ferroelectric layer, a channel layer with n-type and p-type oxide semiconductor layers, a gate electrode on the ferroelectric layer, and a reduced layer with a highly reducing element on the channel layer.
- The semiconductor device features a unique combination of a ferroelectric layer and a reduced layer, enhancing its functionality and performance.
- The inclusion of the ferroelectric layer allows for improved memory retention and switching characteristics.
- The reduced layer, with a highly reducing element, contributes to the overall efficiency and stability of the device.
- The device's design offers potential advancements in semiconductor technology, particularly in the field of memory storage and logic applications.
- By integrating these innovative layers, the semiconductor device showcases a novel approach to enhancing its operational capabilities.
Potential Applications: The technology can be applied in memory storage devices, logic circuits, and other semiconductor applications requiring high performance and stability.
Problems Solved: The semiconductor device addresses issues related to memory retention, switching speed, and overall efficiency in semiconductor devices.
Benefits: Improved memory retention, enhanced switching characteristics, increased efficiency, and stability in semiconductor devices.
Commercial Applications: The technology can be utilized in the development of advanced memory storage devices, logic circuits for computing systems, and other semiconductor applications in the electronics industry.
Questions about the Semiconductor Device: 1. How does the inclusion of the ferroelectric layer impact the performance of the semiconductor device?
- The ferroelectric layer enhances memory retention and switching characteristics in the device.
2. What role does the reduced layer with a highly reducing element play in the functionality of the semiconductor device?
- The reduced layer contributes to the efficiency and stability of the device by utilizing a highly reducing element.
Original Abstract Submitted
Provided is a semiconductor device including a ferroelectric layer. The semiconductor device includes a channel layer including an n-type oxide semiconductor layer and a p-type oxide semiconductor layer, a ferroelectric layer disposed on the channel layer, a gate electrode disposed on the ferroelectric layer, and a reduced layer disposed on the channel layer and including an element having greater reducing power than a metal included in the channel layer.