Samsung electronics co., ltd. (20240244848). SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER simplified abstract
SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER
Organization Name
Inventor(s)
Seunggeol Nam of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240244848 titled 'SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER
The semiconductor device described in the abstract includes a ferroelectric layer, a channel layer with n-type and p-type oxide semiconductor layers, a gate electrode on the ferroelectric layer, and a reduced layer with a highly reducing element.
- The semiconductor device features a unique combination of materials, including a ferroelectric layer and a reduced layer, to enhance its performance.
- The presence of the ferroelectric layer allows for improved control and stability of the device's electrical properties.
- The use of both n-type and p-type oxide semiconductor layers in the channel layer enables efficient electron transport within the device.
- The reduced layer, containing a highly reducing element, contributes to the overall reduction of the device, enhancing its functionality.
Potential Applications: - This technology could be applied in memory devices, sensors, and other electronic components requiring precise control of electrical properties.
Problems Solved: - The semiconductor device addresses the need for improved performance and stability in electronic devices by utilizing a ferroelectric layer and a reduced layer.
Benefits: - Enhanced control and stability of electrical properties - Improved performance and efficiency in electronic devices
Commercial Applications: - Memory devices - Sensors - Integrated circuits
Questions about the technology: 1. How does the ferroelectric layer impact the performance of the semiconductor device? 2. What specific advantages does the reduced layer with a highly reducing element offer in this technology?
Original Abstract Submitted
provided is a semiconductor device including a ferroelectric layer. the semiconductor device includes a channel layer including an n-type oxide semiconductor layer and a p-type oxide semiconductor layer, a ferroelectric layer disposed on the channel layer, a gate electrode disposed on the ferroelectric layer, and a reduced layer disposed on the channel layer and including an element having greater reducing power than a metal included in the channel layer.