Pages that link to "Category:GlobalFoundries U.S. Inc."
Jump to navigation
Jump to search
The following pages link to Category:GlobalFoundries U.S. Inc.:
View (previous 50 | next 50) (20 | 50 | 100 | 250 | 500)- Patent Applications Report for 3rd Mar 2023 (← links)
- 20240009668. MICROFLUIDIC CHANNELS IN A SUBSTRATE WITH A SURFACE COVERED BY A LAYER STACK simplified abstract (GlobalFoundries U.S. Inc.) (← links)
- 20240014101. MICROFLUIDIC CHANNELS SEALED WITH DIRECTIONALLY-GROWN PLUGS simplified abstract (GlobalFoundries U.S. Inc.) (← links)
- 20240021621. INTEGRATED CIRCUIT STRUCTURE WITH CELLS HAVING ASYMMETRIC POWER RAIL simplified abstract (GlobalFoundries U.S. Inc.) (← links)
- Patent Applications Report for 26th Jan 2024 (← links)
- Patent Applications Report for 8th Mar 2024 (← links)
- Memristors Patent Application Trends 2024 (← links)
- GlobalFoundries U.S. Inc. (20240242013). TRUSTED PARAMETERIZED CELLS (PCELLS) ON BLOCKCHAIN simplified abstract (← links)
- 18099389. HEATER ELEMENTS simplified abstract (GlobalFoundries U.S. Inc.) (← links)
- 18157939. SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACENT AN ISOLATION STRUCTURE simplified abstract (GlobalFoundries U.S. Inc.) (← links)
- 18098999. FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL simplified abstract (GlobalFoundries U.S. Inc.) (← links)
- 18099366. HEATER TERMINAL CONTACTS simplified abstract (GlobalFoundries U.S. Inc.) (← links)
- 18438882. LATERAL BIPOLAR TRANSISTORS WITH GATE STRUCTURE ALIGNED TO EXTRINSIC BASE simplified abstract (GlobalFoundries U.S. Inc.) (← links)
- 18172488. DEFECT DETECTION SYSTEM FOR CAVITY IN INTEGRATED CIRCUIT simplified abstract (GlobalFoundries U.S. Inc.) (← links)
- 18170925. MULTI-RAIL SENSE CIRCUIT WITH PRE-CHARGE TRANSISTORS AND MEMORY CIRCUIT INCORPORATING THE SENSE CIRCUIT simplified abstract (GlobalFoundries U.S. Inc.) (← links)
- 18171729. CLUSTERED IC DIES TO INCREASE IC DIES PER WAFER simplified abstract (GlobalFoundries U.S. Inc.) (← links)
- 18653473. SEMICONDUCTOR STRUCTURE INCLUDING SECTIONED WELL REGION simplified abstract (GlobalFoundries U.S. Inc.) (← links)
- 18111959. HIGH PERFORMANCE SILICON CONTROLLED RECTIFIER DEVICES simplified abstract (GlobalFoundries U.S. Inc.) (← links)
- 18171765. SEMICONDUCTOR STRUCTURE WITH DEVICE INCLUDING AT LEAST ONE IN-WELL POROUS REGION simplified abstract (GlobalFoundries U.S. Inc.) (← links)
- 18111995. DEVICE WITH WORKFUNCTION METAL IN DRIFT REGION simplified abstract (GlobalFoundries U.S. Inc.) (← links)
- 18172027. FERROELECTRIC MEMORY DEVICE WITH MULTI-LEVEL BIT CELL simplified abstract (GlobalFoundries U.S. Inc.) (← links)