Samsung electronics co., ltd. (20250022716). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME: Difference between revisions
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==Inventor(s)== | ==Inventor(s)== | ||
[[:Category:Eun Jung Kim of SUWON-SI | [[:Category:Eun Jung Kim of SUWON-SI KR|Eun Jung Kim of SUWON-SI KR]][[Category:Eun Jung Kim of SUWON-SI KR]] | ||
[[:Category:Sung Woo Kim of SUWON-SI | [[:Category:Sung Woo Kim of SUWON-SI KR|Sung Woo Kim of SUWON-SI KR]][[Category:Sung Woo Kim of SUWON-SI KR]] | ||
[[:Category:Hyun Seo Shin of SUWON-SI | [[:Category:Hyun Seo Shin of SUWON-SI KR|Hyun Seo Shin of SUWON-SI KR]][[Category:Hyun Seo Shin of SUWON-SI KR]] | ||
[[:Category:Min Jeong Cho of SUWON-SI | [[:Category:Min Jeong Cho of SUWON-SI KR|Min Jeong Cho of SUWON-SI KR]][[Category:Min Jeong Cho of SUWON-SI KR]] | ||
[[:Category:Min Su Choi of SUWON-SI | [[:Category:Min Su Choi of SUWON-SI KR|Min Su Choi of SUWON-SI KR]][[Category:Min Su Choi of SUWON-SI KR]] | ||
==SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME== | ==SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME== | ||
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This abstract first appeared for US patent application 20250022716 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | This abstract first appeared for US patent application 20250022716 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | ||
==Original Abstract Submitted== | ==Original Abstract Submitted== |
Latest revision as of 02:35, 26 March 2025
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
This abstract first appeared for US patent application 20250022716 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Original Abstract Submitted
a method of fabricating a semiconductor device includes providing a substrate, forming a target film, a first mask film, a second mask film, and an upper mask pattern on the substrate, forming a first spacer pattern that includes a first line portion and a second line portion, and a folding portion that connects the first line portion and the second line portion, forming a slit mask pattern that partially covers the first spacer pattern, forming a first mask pattern by patterning the second mask film using the slit mask pattern and the first spacer pattern as an etching mask, forming a second spacer pattern, forming a second mask pattern by patterning the first mask film using the second spacer pattern as an etching mask, and forming a plurality of target patterns by patterning the target film using the second mask pattern as an etching mask.
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