Samsung electronics co., ltd. (20250022716). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
This abstract first appeared for US patent application 20250022716 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Original Abstract Submitted
a method of fabricating a semiconductor device includes providing a substrate, forming a target film, a first mask film, a second mask film, and an upper mask pattern on the substrate, forming a first spacer pattern that includes a first line portion and a second line portion, and a folding portion that connects the first line portion and the second line portion, forming a slit mask pattern that partially covers the first spacer pattern, forming a first mask pattern by patterning the second mask film using the slit mask pattern and the first spacer pattern as an etching mask, forming a second spacer pattern, forming a second mask pattern by patterning the first mask film using the second spacer pattern as an etching mask, and forming a plurality of target patterns by patterning the target film using the second mask pattern as an etching mask.
