Samsung electronics co., ltd. (20250079393). SEMICONDUCTOR PACKAGE AND METHOD FOR FABRICATING THE SAME: Difference between revisions
Creating a new page |
Creating a new page |
||
| Line 8: | Line 8: | ||
[[Category:samsung electronics co., ltd.]] | [[Category:samsung electronics co., ltd.]] | ||
==Inventor(s)== | |||
[[:Category:Sang Cheon Park of Suwon-si (KR)|Sang Cheon Park of Suwon-si (KR)]][[Category:Sang Cheon Park of Suwon-si (KR)]] | |||
[[:Category:Un-Byoung Kang of Suwon-si (KR)|Un-Byoung Kang of Suwon-si (KR)]][[Category:Un-Byoung Kang of Suwon-si (KR)]] | |||
[[:Category:Ku Young Kim of Suwon-si (KR)|Ku Young Kim of Suwon-si (KR)]][[Category:Ku Young Kim of Suwon-si (KR)]] | |||
[[:Category:Jun Woo Myung of Suwon-si (KR)|Jun Woo Myung of Suwon-si (KR)]][[Category:Jun Woo Myung of Suwon-si (KR)]] | |||
[[:Category:Seung-Jin Lee of Suwon-si (KR)|Seung-Jin Lee of Suwon-si (KR)]][[Category:Seung-Jin Lee of Suwon-si (KR)]] | |||
[[:Category:Ji-Seok Hong of Suwon-si (KR)|Ji-Seok Hong of Suwon-si (KR)]][[Category:Ji-Seok Hong of Suwon-si (KR)]] | |||
==SEMICONDUCTOR PACKAGE AND METHOD FOR FABRICATING THE SAME== | |||
This abstract first appeared for US patent application 20250079393 titled 'SEMICONDUCTOR PACKAGE AND METHOD FOR FABRICATING THE SAME | |||
==Original Abstract Submitted== | |||
a semiconductor package includes: a first semiconductor chip including a first substrate and a first through electrode passing through the first substrate, wherein the first substrate has a first active surface and a first non-active surface; a chip structure including a plurality of second semiconductor chips stacked on the first semiconductor chip, wherein each second semiconductor chip includes a second substrate and a second through electrode passing through the second substrate; and a third semiconductor chip disposed on the chip structure, and including a third substrate, wherein the first substrate has a first width and a first thickness, wherein the second substrate has a second width and a second thickness, and the third substrate has a third width and a third thickness, wherein the third thickness is thicker than the second thickness, and the third width is greater than the second width. | |||
[[Category:H01L23/00]] | |||
[[Category:H01L23/28]] | |||
[[Category:H01L23/48]] | |||
[[Category:H01L23/498]] | |||
[[Category:H01L25/065]] | |||
[[Category:H10B80/00]] | |||
[[Category:CPC_H01L24/80]] | |||
Latest revision as of 02:11, 17 March 2025
SEMICONDUCTOR PACKAGE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Sang Cheon Park of Suwon-si (KR)
Un-Byoung Kang of Suwon-si (KR)
Jun Woo Myung of Suwon-si (KR)
Seung-Jin Lee of Suwon-si (KR)
SEMICONDUCTOR PACKAGE AND METHOD FOR FABRICATING THE SAME
This abstract first appeared for US patent application 20250079393 titled 'SEMICONDUCTOR PACKAGE AND METHOD FOR FABRICATING THE SAME
Original Abstract Submitted
a semiconductor package includes: a first semiconductor chip including a first substrate and a first through electrode passing through the first substrate, wherein the first substrate has a first active surface and a first non-active surface; a chip structure including a plurality of second semiconductor chips stacked on the first semiconductor chip, wherein each second semiconductor chip includes a second substrate and a second through electrode passing through the second substrate; and a third semiconductor chip disposed on the chip structure, and including a third substrate, wherein the first substrate has a first width and a first thickness, wherein the second substrate has a second width and a second thickness, and the third substrate has a third width and a third thickness, wherein the third thickness is thicker than the second thickness, and the third width is greater than the second width.