Taiwan semiconductor manufacturing company, ltd. (20250063807). SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING: Difference between revisions
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[[Category:taiwan semiconductor manufacturing company, ltd.]] | [[Category:taiwan semiconductor manufacturing company, ltd.]] | ||
==Inventor(s)== | |||
[[:Category:Hung-Yao Chen of Hsinchu (TW)|Hung-Yao Chen of Hsinchu (TW)]][[Category:Hung-Yao Chen of Hsinchu (TW)]] | |||
[[:Category:Pin-Chu Liang of Hsinchu (TW)|Pin-Chu Liang of Hsinchu (TW)]][[Category:Pin-Chu Liang of Hsinchu (TW)]] | |||
[[:Category:Hsueh-Chang Sung of Zhubei City (TW)|Hsueh-Chang Sung of Zhubei City (TW)]][[Category:Hsueh-Chang Sung of Zhubei City (TW)]] | |||
[[:Category:Pei-Ren Jeng of Chu-Bei City (TW)|Pei-Ren Jeng of Chu-Bei City (TW)]][[Category:Pei-Ren Jeng of Chu-Bei City (TW)]] | |||
[[:Category:Yee-Chia Yeo of Hsinchu (TW)|Yee-Chia Yeo of Hsinchu (TW)]][[Category:Yee-Chia Yeo of Hsinchu (TW)]] | |||
==SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING== | |||
This abstract first appeared for US patent application 20250063807 titled 'SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING | |||
==Original Abstract Submitted== | |||
in an embodiment, a method includes forming a first fin and a second fin within an insulation material over a substrate, the first fin and the second fin includes different materials, the insulation material being interposed between the first fin and the second fin, the first fin having a first width and the second fin having a second width; forming a first capping layer over the first fin; and forming a second capping layer over the second fin, the first capping layer having a first thickness, the second capping layer having a second thickness different from the first thickness. | |||
[[Category:H01L21/8234]] | |||
[[Category:H01L21/8238]] | |||
[[Category:H01L27/088]] | |||
[[Category:H01L27/092]] | |||
[[Category:CPC_H01L21/823431]] | |||
Latest revision as of 04:27, 19 March 2025
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hsueh-Chang Sung of Zhubei City (TW)
Pei-Ren Jeng of Chu-Bei City (TW)
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING
This abstract first appeared for US patent application 20250063807 titled 'SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING
Original Abstract Submitted
in an embodiment, a method includes forming a first fin and a second fin within an insulation material over a substrate, the first fin and the second fin includes different materials, the insulation material being interposed between the first fin and the second fin, the first fin having a first width and the second fin having a second width; forming a first capping layer over the first fin; and forming a second capping layer over the second fin, the first capping layer having a first thickness, the second capping layer having a second thickness different from the first thickness.