Samsung electronics co., ltd. (20250129267). POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE: Difference between revisions
Wikipatents (talk | contribs) Creating a new page |
Wikipatents (talk | contribs) Creating a new page |
||
| Line 1: | Line 1: | ||
<!-- JSON-LD markup for search engines: | |||
{"@context":"https://schema.org","@type":"TechArticle","headline":"POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE","name":"POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE","description":"a polishing slurry, and a method of manufacturing a semiconductor device using the polishing slurry are provided. the polishing slurry includes nano-abrasive particles having a mohs hardness greater t...","datePublished":"April 24th, 2025","mainEntity":{"@type":"Patent","identifier":"20250129267","name":"POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE","abstract":"a polishing slurry, and a method of manufacturing a semiconductor device using the polishing slurry are provided. the polishing slurry includes nano-abrasive particles having a mohs hardness greater than about 5, and soft particles having a mohs hardness lower than the mohs hardness of the nano-abrasive particles, and wherein the nano-abrasive particles and the soft particles have a same sign of zeta potentials as each other in the polishing slurry.","applicationNumber":"20250129267","datePublished":"April 24th, 2025","inventor":[{"@type":"Person","name":"Yoonseok KO"},{"@type":"Person","name":"Jung Hoon LEE"},{"@type":"Person","name":"Sang Soo JEE"},{"@type":"Person","name":"Fedosya KALININA"},{"@type":"Person","name":"Hyune Jea LEE"}],"applicant":{"@type":"Organization","name":"samsung electronics co., ltd."},"additionalProperty":[{"@type":"PropertyValue","name":"IPC Classification","value":"C09G1/02"},{"@type":"PropertyValue","name":"IPC Classification","value":"H01L21/321"},{"@type":"PropertyValue","name":"CPC Classification","value":"C09G1/02"}]}} | |||
--> | |||
=POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE= | =POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE= | ||
Latest revision as of 15:24, 29 April 2025
POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Fedosya Kalinina of Suwon-si KR
POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250129267 titled 'POLISHING SLURRY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Original Abstract Submitted
a polishing slurry, and a method of manufacturing a semiconductor device using the polishing slurry are provided. the polishing slurry includes nano-abrasive particles having a mohs hardness greater than about 5, and soft particles having a mohs hardness lower than the mohs hardness of the nano-abrasive particles, and wherein the nano-abrasive particles and the soft particles have a same sign of zeta potentials as each other in the polishing slurry.
(Ad) Transform your business with AI in minutes, not months
✓
Custom AI strategy tailored to your specific industry needs
✓
Step-by-step implementation with measurable ROI
✓
5-minute setup that requires zero technical skills
Trusted by 1,000+ companies worldwide
