Samsung electronics co., ltd. (20250016994). SEMICONDUCTOR DEVICE: Difference between revisions
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==Inventor(s)== | ==Inventor(s)== | ||
[[:Category:Heejae Chae of Suwon-si | [[:Category:Heejae Chae of Suwon-si KR|Heejae Chae of Suwon-si KR]][[Category:Heejae Chae of Suwon-si KR]] | ||
[[:Category:Hyunjin Lee of Suwon-si | [[:Category:Hyunjin Lee of Suwon-si KR|Hyunjin Lee of Suwon-si KR]][[Category:Hyunjin Lee of Suwon-si KR]] | ||
[[:Category:Yun Choi of Suwon-si | [[:Category:Yun Choi of Suwon-si KR|Yun Choi of Suwon-si KR]][[Category:Yun Choi of Suwon-si KR]] | ||
==SEMICONDUCTOR DEVICE== | ==SEMICONDUCTOR DEVICE== | ||
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This abstract first appeared for US patent application 20250016994 titled 'SEMICONDUCTOR DEVICE | This abstract first appeared for US patent application 20250016994 titled 'SEMICONDUCTOR DEVICE | ||
==Original Abstract Submitted== | ==Original Abstract Submitted== | ||
Latest revision as of 08:37, 25 March 2025
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250016994 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
the semiconductor includes a substrate including first active patterns, the substrate defining trenches between the first active patterns; an upper silicon pattern on an upper sidewall of at least a portion of each of the first active patterns; and a first contact plug contacting an edge portion in a longitudinal direction of each of the first active patterns, a sidewall of the first contact plug contacting at least a portion of the upper silicon pattern, and the first contact plug having a bottom lower than a bottom of the upper silicon pattern.