Denso corporation (20250069967). SEMICONDUCTOR DEVICE: Difference between revisions
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==Inventor(s)== | |||
[[:Category:Akinori Sakakibara of Toyota-city (JP)|Akinori Sakakibara of Toyota-city (JP)]][[Category:Akinori Sakakibara of Toyota-city (JP)]] | |||
[[:Category:Takanori Kawashima of Toyota-city (JP)|Takanori Kawashima of Toyota-city (JP)]][[Category:Takanori Kawashima of Toyota-city (JP)]] | |||
[[:Category:Shingo Tsuchimochi of Toyota-city (JP)|Shingo Tsuchimochi of Toyota-city (JP)]][[Category:Shingo Tsuchimochi of Toyota-city (JP)]] | |||
[[:Category:Shoichiro Omae of Kariya-city (JP)|Shoichiro Omae of Kariya-city (JP)]][[Category:Shoichiro Omae of Kariya-city (JP)]] | |||
==SEMICONDUCTOR DEVICE== | |||
This abstract first appeared for US patent application 20250069967 titled 'SEMICONDUCTOR DEVICE | |||
==Original Abstract Submitted== | |||
a semiconductor device includes a first insulating circuit board, a semiconductor element on the first insulating circuit board, and an encapsulating body. the first insulating circuit board includes a first insulating substrate, and a first inner conductor layer, and a first outer conductor layer. the first inner conductor layer is electrically connected to a first electrode of the semiconductor element inside of the encapsulating body. the first outer conductor layer is exposed from a surface of the encapsulating body. the first inner conductor layer has a first thin-wall portion a thickness of which reduces toward an outer side, along an outer peripheral edge of the first inner conductor layer with a first width. the first outer conductor layer (i) does not have or (ii) has a second thin-wall portion along the outer peripheral edge of the first outer conductor layer with a second width. | |||
[[Category:H01L23/13]] | |||
[[Category:H01L23/31]] | |||
[[Category:H01L23/498]] | |||
[[Category:H01L25/065]] | |||
[[Category:H01L25/07]] | |||
[[Category:CPC_H01L23/13]] | |||
Latest revision as of 08:56, 17 March 2025
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Akinori Sakakibara of Toyota-city (JP)
Takanori Kawashima of Toyota-city (JP)
Shingo Tsuchimochi of Toyota-city (JP)
Shoichiro Omae of Kariya-city (JP)
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250069967 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device includes a first insulating circuit board, a semiconductor element on the first insulating circuit board, and an encapsulating body. the first insulating circuit board includes a first insulating substrate, and a first inner conductor layer, and a first outer conductor layer. the first inner conductor layer is electrically connected to a first electrode of the semiconductor element inside of the encapsulating body. the first outer conductor layer is exposed from a surface of the encapsulating body. the first inner conductor layer has a first thin-wall portion a thickness of which reduces toward an outer side, along an outer peripheral edge of the first inner conductor layer with a first width. the first outer conductor layer (i) does not have or (ii) has a second thin-wall portion along the outer peripheral edge of the first outer conductor layer with a second width.