Information for "18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.)"
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| Display title | 18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.) |
| Default sort key | 18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.) |
| Page length (in bytes) | 3,177 |
| Page ID | 30749 |
| Page content language | en - English |
| Page content model | wikitext |
| Indexing by robots | Allowed |
| Number of redirects to this page | 0 |
| Counted as a content page | Yes |
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| Edit | Allow all users (infinite) |
| Move | Allow all users (infinite) |
Edit history
| Page creator | Wikipatents (talk | contribs) |
| Date of page creation | 05:10, 4 March 2024 |
| Latest editor | Wikipatents (talk | contribs) |
| Date of latest edit | 05:10, 4 March 2024 |
| Total number of edits | 1 |
| Total number of distinct authors | 1 |
| Recent number of edits (within past 90 days) | 0 |
| Recent number of distinct authors | 0 |
