View source for US Patent Application 18446539. METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE simplified abstract

=METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]==Inventor(s)==

[[Category:[[:Category:Eric Peng of Hsinchu City (TW)|Eric Peng of Hsinchu City (TW)]]]]

[[Category:[[:Category:Chao-Cheng Chen of Hsin-Chu City (TW)|Chao-Cheng Chen of Hsin-Chu City (TW)]]]]

[[Category:[[:Category:Chii-Horng Li of Hsinchu (TW)|Chii-Horng Li of Hsinchu (TW)]]]]

[[Category:[[:Category:Ming-Hua Yu of Hsinchu City (TW)|Ming-Hua Yu of Hsinchu City (TW)]]]]

[[Category:[[:Category:Shih-Hao Lo of Hsinchu County (TW)|Shih-Hao Lo of Hsinchu County (TW)]]]]

[[Category:[[:Category:Syun-Ming Jang of Hsin-Chu (TW)|Syun-Ming Jang of Hsin-Chu (TW)]]]]

[[Category:[[:Category:Tze-Liang Lee of Hsinchu (TW)|Tze-Liang Lee of Hsinchu (TW)]]]]

[[Category:[[:Category:Ying-Hao Hsieh of Hsinchu (TW)|Ying-Hao Hsieh of Hsinchu (TW)]]]]

==METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18446539 titled 'METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE

==Simplified Explanation==

The patent application describes a device that includes a gate stack and spacers on a semiconductor substrate.
* The gate stack is surrounded by spacers on its sidewalls.
* A recess is formed in the semiconductor substrate next to the gate stack.
* The recess has two profiles - a first profile with vertical sidewalls and a second profile below the first profile.
* The second profile is wider within the semiconductor substrate than the first profile, creating a bottle-neck shape.
* The recess is filled with a semiconductor material.
* Additional spacers are placed on the semiconductor substrate next to the recess.


==Original Abstract Submitted==

A device including a gate stack over a semiconductor substrate having a pair of spacers abutting sidewalls of the gate stack. A recess is formed in the semiconductor substrate adjacent the gate stack. The recess has a first profile having substantially vertical sidewalls and a second profile contiguous with and below the first profile. The first and second profiles provide a bottle-neck shaped profile of the recess in the semiconductor substrate, the second profile having a greater width within the semiconductor substrate than the first profile. The recess is filled with a semiconductor material. A pair of spacers are disposed overly the semiconductor substrate adjacent the recess.



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[[Category:H01L21/306]]
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