View source for US Patent Application 18364614. METHODS FOR REDUCING SCRATCH DEFECTS IN CHEMICAL MECHANICAL PLANARIZATION simplified abstract

=METHODS FOR REDUCING SCRATCH DEFECTS IN CHEMICAL MECHANICAL PLANARIZATION=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Wan-Chun Pan of Hsinchu City (TW)|Wan-Chun Pan of Hsinchu City (TW)]][[Category:Wan-Chun Pan of Hsinchu City (TW)]]

[[:Category:William Weilun Hong of Hsinchu City (TW)|William Weilun Hong of Hsinchu City (TW)]][[Category:William Weilun Hong of Hsinchu City (TW)]]

[[:Category:Ying-Tsung Chen of Hsinchu City (TW)|Ying-Tsung Chen of Hsinchu City (TW)]][[Category:Ying-Tsung Chen of Hsinchu City (TW)]]

==METHODS FOR REDUCING SCRATCH DEFECTS IN CHEMICAL MECHANICAL PLANARIZATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18364614 titled 'METHODS FOR REDUCING SCRATCH DEFECTS IN CHEMICAL MECHANICAL PLANARIZATION

==Simplified Explanation==

- The patent application describes a method for forming a semiconductor device.
- The method involves using a precursor with a substrate and protrusions, which are separated by trenches.
- A first dielectric layer is deposited over the protrusions and fills the trenches. This dielectric layer has a specific hardness.
- The first dielectric layer is then treated with an oxidizer.
- A chemical mechanical planarization (CMP) process is performed on the first dielectric layer.
- The purpose of this method is to improve the formation of a semiconductor device by providing a specific dielectric layer and optimizing its surface through treatment and planarization.


==Original Abstract Submitted==

Disclosed is a method of forming a semiconductor device. The method includes providing a precursor having a substrate and protrusions over the substrate. The protrusions are interposed by trenches. The method further includes depositing a first dielectric layer over the protrusions and filling the trenches. The first dielectric layer has a first hardness. The method further includes treating the first dielectric layer with an oxidizer. The method further includes performing a chemical mechanical planarization (CMP) process to the first dielectric layer.



[[Category:H01L21/3105]]
[[Category:H01L21/02]]
[[Category:H01L21/8234]]
[[Category:H01L21/762]]