View source for US Patent Application 18358508. Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment simplified abstract

=Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Wei-Che Hsieh of New Taipei City (TW)|Wei-Che Hsieh of New Taipei City (TW)]][[Category:Wei-Che Hsieh of New Taipei City (TW)]]

[[:Category:Ching Yu Huang of Hsinchu (TW)|Ching Yu Huang of Hsinchu (TW)]][[Category:Ching Yu Huang of Hsinchu (TW)]]

[[:Category:Hsin-Hao Yeh of Taipei City (TW)|Hsin-Hao Yeh of Taipei City (TW)]][[Category:Hsin-Hao Yeh of Taipei City (TW)]]

[[:Category:Chunyao Wang of Zhubei City (TW)|Chunyao Wang of Zhubei City (TW)]][[Category:Chunyao Wang of Zhubei City (TW)]]

[[:Category:Tze-Liang Lee of Hsinchu (TW)|Tze-Liang Lee of Hsinchu (TW)]][[Category:Tze-Liang Lee of Hsinchu (TW)]]

==Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18358508 titled 'Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment

==Simplified Explanation==

- The patent application describes a method for depositing a silicon nitride layer on a wafer.
- The method involves placing the wafer into a process chamber.
- A silicon-containing precursor is introduced into the process chamber.
- The silicon-containing precursor is then purged from the process chamber.
- Hydrogen radicals are introduced into the process chamber.
- The hydrogen radicals are then purged from the process chamber.
- A nitrogen-containing precursor is introduced into the process chamber.
- The nitrogen-containing precursor is then purged from the process chamber.

* The method provides a way to deposit a silicon nitride layer on a wafer.
* It involves a series of steps including introducing and purging different precursors and radicals.
* The method can be used in semiconductor manufacturing processes.
* It may improve the quality and performance of the silicon nitride layer.
* The method may offer advantages in terms of efficiency and reliability.


==Original Abstract Submitted==

A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.



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