View source for US Patent Application 18336754. SEMICONDUCTOR DEVICE HAVING ACTIVE FIN PATTERN AT CELL BOUNDARY simplified abstract

=SEMICONDUCTOR DEVICE HAVING ACTIVE FIN PATTERN AT CELL BOUNDARY=


==Organization Name==

[[Samsung Electronics Co., Ltd.]]


==Inventor(s)==

[[Sanghoon Baek of Seoul (KR)]]


[[Jungho Do of Suwon-si (KR)]]


[[Jaewoo Seo of Seoul (KR)]]


[[Jisu Yu of Seoul (KR)]]


==SEMICONDUCTOR DEVICE HAVING ACTIVE FIN PATTERN AT CELL BOUNDARY - A simplified explanation of the abstract==


*This abstract for appeared for US patent application  number 18336754 Titled 'SEMICONDUCTOR DEVICE HAVING ACTIVE FIN PATTERN AT CELL BOUNDARY'

==Simplified Explanation==

The abstract describes a semiconductor device that consists of two rows of standard cells placed on a substrate. The first row has cells with a certain height, while the second row has cells with a different height. There is also a power line that runs along the boundary between the first and second standard cells in a specific direction.


==Original Abstract Submitted==

A semiconductor device includes a first standard cell disposed on a substrate in a first row and having a first cell height; a second standard cell disposed on the substrate in a second row, adjacent to the first row, second standard cell having a second cell height, different from the first cell height; and a power line extending in a first direction along a boundary between the first standard cell and the second standard cell.