View source for US Patent Application 18312329. COMPOSITE ABRASIVE, METHOD OF PREPARING SAME, POLISHING SLURRY INCLUDING SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract

=COMPOSITE ABRASIVE, METHOD OF PREPARING SAME, POLISHING SLURRY INCLUDING SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE=


==Organization Name==

[[Samsung Electronics Co., Ltd.]]


==Inventor(s)==

[[Sang Soo Jee of Suwon-si (KR)]]

[[Eun Sung Lee of Suwon-si (KR)]]

[[Junghoon Lee of Suwon-si (KR)]]

[[Youngnam Kwon of Suwon-si (KR)]]

==COMPOSITE ABRASIVE, METHOD OF PREPARING SAME, POLISHING SLURRY INCLUDING SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18312329 titled 'COMPOSITE ABRASIVE, METHOD OF PREPARING SAME, POLISHING SLURRY INCLUDING SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

==Simplified Explanation==

- The patent application describes a composite abrasive material and its preparation method.
- The composite abrasive is used in polishing slurry for manufacturing semiconductor devices.
- The composite abrasive consists of a host material with abrasive particles protruding from its surface.
- The host material has a lower Mohs hardness compared to the abrasive particles.
- The host material can have a two-dimensional planar structure or a layered structure.
- The binding force between the host material and the abrasive particles is at least 200 nN.


==Original Abstract Submitted==

Provided are a composite abrasive, a method of preparing same, polishing slurry including same, and a method of manufacturing a semiconductor device using the polishing slurry, the composite abrasive including a host material and abrasive particles protruding from the surface of the host material. The host material may have a Mohs hardness smaller than a Mohs hardness of the abrasive particles. The host material may have a two-dimensional planar structure and/or a layered structure. A binding force between the host material and the abrasive particles may be greater than or equal to about 200 nN.