US Patent Application 18312329. COMPOSITE ABRASIVE, METHOD OF PREPARING SAME, POLISHING SLURRY INCLUDING SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
COMPOSITE ABRASIVE, METHOD OF PREPARING SAME, POLISHING SLURRY INCLUDING SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Youngnam Kwon of Suwon-si (KR)
COMPOSITE ABRASIVE, METHOD OF PREPARING SAME, POLISHING SLURRY INCLUDING SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18312329 titled 'COMPOSITE ABRASIVE, METHOD OF PREPARING SAME, POLISHING SLURRY INCLUDING SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
- The patent application describes a composite abrasive material and its preparation method. - The composite abrasive is used in polishing slurry for manufacturing semiconductor devices. - The composite abrasive consists of a host material with abrasive particles protruding from its surface. - The host material has a lower Mohs hardness compared to the abrasive particles. - The host material can have a two-dimensional planar structure or a layered structure. - The binding force between the host material and the abrasive particles is at least 200 nN.
Original Abstract Submitted
Provided are a composite abrasive, a method of preparing same, polishing slurry including same, and a method of manufacturing a semiconductor device using the polishing slurry, the composite abrasive including a host material and abrasive particles protruding from the surface of the host material. The host material may have a Mohs hardness smaller than a Mohs hardness of the abrasive particles. The host material may have a two-dimensional planar structure and/or a layered structure. A binding force between the host material and the abrasive particles may be greater than or equal to about 200 nN.
