View source for US Patent Application 18231017. EUV LIGHT SOURCE AND APPARATUS FOR LITHOGRAPHY simplified abstract

=EUV LIGHT SOURCE AND APPARATUS FOR LITHOGRAPHY=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]==Inventor(s)==

[[Category:[[:Category:Shang-Chieh Chien of New Taipei City (TW)|Shang-Chieh Chien of New Taipei City (TW)]]]]

[[Category:[[:Category:Po-Chung Cheng of Longxing Village (TW)|Po-Chung Cheng of Longxing Village (TW)]]]]

[[Category:[[:Category:Chia-Chen Chen of Hsinchu City (TW)|Chia-Chen Chen of Hsinchu City (TW)]]]]

[[Category:[[:Category:Jen-Yang Chung of Penghu County (TW)|Jen-Yang Chung of Penghu County (TW)]]]]

[[Category:[[:Category:Li-Jui Chen of Hsinchu City (TW)|Li-Jui Chen of Hsinchu City (TW)]]]]

[[Category:[[:Category:Tzung-Chi Fu of Miaoli City (TW)|Tzung-Chi Fu of Miaoli City (TW)]]]]

[[Category:[[:Category:Shang-Ying Wu of Hsinchu County (TW)|Shang-Ying Wu of Hsinchu County (TW)]]]]

==EUV LIGHT SOURCE AND APPARATUS FOR LITHOGRAPHY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18231017 titled 'EUV LIGHT SOURCE AND APPARATUS FOR LITHOGRAPHY

==Simplified Explanation==

The patent application describes an apparatus for generating extreme ultra violet (EUV) radiation using a tin (Sn) droplet.
* The apparatus includes a collector, a target droplet generator, a rotatable debris collection device, and a chamber.
* The target droplet generator generates a tin droplet which is used as a radiation source.
* The rotatable debris collection device collects debris generated during the process.
* The device has a first end support, a second end support, and multiple vanes supported by these supports.
* At least one vane is coated with a catalytic layer that reduces SnH to Sn, improving the efficiency of the apparatus.


==Original Abstract Submitted==

An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnHto Sn.



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