US Patent Application 18231017. EUV LIGHT SOURCE AND APPARATUS FOR LITHOGRAPHY simplified abstract

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EUV LIGHT SOURCE AND APPARATUS FOR LITHOGRAPHY

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Shang-Chieh Chien of New Taipei City (TW)]]

[[Category:Po-Chung Cheng of Longxing Village (TW)]]

[[Category:Chia-Chen Chen of Hsinchu City (TW)]]

[[Category:Jen-Yang Chung of Penghu County (TW)]]

[[Category:Li-Jui Chen of Hsinchu City (TW)]]

[[Category:Tzung-Chi Fu of Miaoli City (TW)]]

[[Category:Shang-Ying Wu of Hsinchu County (TW)]]

EUV LIGHT SOURCE AND APPARATUS FOR LITHOGRAPHY - A simplified explanation of the abstract

This abstract first appeared for US patent application 18231017 titled 'EUV LIGHT SOURCE AND APPARATUS FOR LITHOGRAPHY

Simplified Explanation

The patent application describes an apparatus for generating extreme ultra violet (EUV) radiation using a tin (Sn) droplet.

  • The apparatus includes a collector, a target droplet generator, a rotatable debris collection device, and a chamber.
  • The target droplet generator generates a tin droplet which is used as a radiation source.
  • The rotatable debris collection device collects debris generated during the process.
  • The device has a first end support, a second end support, and multiple vanes supported by these supports.
  • At least one vane is coated with a catalytic layer that reduces SnH to Sn, improving the efficiency of the apparatus.


Original Abstract Submitted

An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnHto Sn.

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