View source for US Patent Application 17829046. PMOS THRESHOLD COMPENSATION SENSE AMPLIFIER FOR FeRAM DEVICES simplified abstract

=PMOS THRESHOLD COMPENSATION SENSE AMPLIFIER FOR FeRAM DEVICES=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Tong Liu of Folsom CA (US)|Tong Liu of Folsom CA (US)]][[Category:Tong Liu of Folsom CA (US)]]

[[:Category:Daniele Vimercati of El Dorado Hills CA (US)|Daniele Vimercati of El Dorado Hills CA (US)]][[Category:Daniele Vimercati of El Dorado Hills CA (US)]]

==PMOS THRESHOLD COMPENSATION SENSE AMPLIFIER FOR FeRAM DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17829046 titled 'PMOS THRESHOLD COMPENSATION SENSE AMPLIFIER FOR FeRAM DEVICES

==Simplified Explanation==

The patent application describes a memory device with a plate line and a pair of ferroelectric layers that act as memory cells.
* The ferroelectric layers are connected to opposite sides of the plate line.
* Each ferroelectric layer is also connected to a digit line.
* A sense amplifier is connected to the digit lines and amplifies the voltages received from the memory cells.
* The sense amplifier includes a threshold voltage compensated latch.
* The latch is made up of multiple p-channel transistors.
* The latch compensates for variations in threshold voltages due to process, voltage, or temperature differences.


==Original Abstract Submitted==

Systems and methods are related to a memory device including a plate line. The memory device also includes a pair of ferroelectric layers implementing a pair of memory cells and coupled to opposite sides of the plate line. The memory device further includes a pair of digit lines each coupled to a respective ferroelectric layer of the pair of ferroelectric layers. The memory device also includes a sense amplifier coupled to the pair of digit lines and configured to sense and amplify voltages received at the digit lines from the respective memory cells. The sense amplifier includes a threshold voltage compensated latch that includes multiple p-channel transistors and is configured to compensate for process, voltage, or temperature variation mismatches between the threshold voltages of the multiple p-channel transistors.



[[Category:G11C11/22]]