View source for Tokyo electron limited (20250132128). Method and System for Plasma Process

=Method and System for Plasma Process=


==Organization Name==

[[:Category:tokyo electron limited|tokyo electron limited]]


[[Category:tokyo electron limited]]

==Inventor(s)==

[[:Category:Evrim Solmaz of Austin TX US|Evrim Solmaz of Austin TX US]][[Category:Evrim Solmaz of Austin TX US]]

[[:Category:Du Zhang of Albany NY US|Du Zhang of Albany NY US]][[Category:Du Zhang of Albany NY US]]

[[:Category:Barton Lane of Austin TX US|Barton Lane of Austin TX US]][[Category:Barton Lane of Austin TX US]]

==Method and System for Plasma Process==


This abstract first appeared for US patent application 20250132128 titled 'Method and System for Plasma Process

==Original Abstract Submitted==

a method for a plasma process includes generating plasma within a process chamber with a source power pulse and applying a bias power pulse to a substrate holder within the process chamber. a frequency of the bias power pulse increases from a first frequency value to a second frequency value during the bias power pulse. the bias power pulse occurs after the source power pulse.



[[Category:H01J37/32]]
[[Category:CPC_H01J37/32155]]