Tokyo electron limited (20250132128). Method and System for Plasma Process
Method and System for Plasma Process
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Method and System for Plasma Process
This abstract first appeared for US patent application 20250132128 titled 'Method and System for Plasma Process
Original Abstract Submitted
a method for a plasma process includes generating plasma within a process chamber with a source power pulse and applying a bias power pulse to a substrate holder within the process chamber. a frequency of the bias power pulse increases from a first frequency value to a second frequency value during the bias power pulse. the bias power pulse occurs after the source power pulse.