View source for Sk hynix inc. (20250151429). SINGLE PHOTON AVALANCHE DIODE

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=SINGLE PHOTON AVALANCHE DIODE=


==Organization Name==

[[:Category:sk hynix inc.|sk hynix inc.]]


[[Category:sk hynix inc.]]

==Inventor(s)==

[[:Category:Soon Yeol Park of Icheon-si KR|Soon Yeol Park of Icheon-si KR]][[Category:Soon Yeol Park of Icheon-si KR]]

==SINGLE PHOTON AVALANCHE DIODE==


This abstract first appeared for US patent application 20250151429 titled 'SINGLE PHOTON AVALANCHE DIODE

==Original Abstract Submitted==

a single photon avalanche diode may include a first diode, a second diode and a third diode. the first diode includes a first pn junction vertically spaced from a light-receiving surface by a first depth. the second diode is formed to be partially contacted with the first diode. the second diode includes a second pn junction vertically spaced from the light-receiving surface by a second depth greater than the first depth. the third diode is formed to be partially contacted with the second diode. the third diode includes a third pn junction spaced from the light-receiving surface by a third depth greater than the second depth. the first to third diodes include different breakdown voltages.



[[Category:H10F39/00]]
[[Category:G01S7/481]]
[[Category:G01S7/4865]]
[[Category:G01S17/894]]
[[Category:CPC_H10F39/8033]]