Sk hynix inc. (20250151429). SINGLE PHOTON AVALANCHE DIODE
SINGLE PHOTON AVALANCHE DIODE
Organization Name
Inventor(s)
Soon Yeol Park of Icheon-si KR
SINGLE PHOTON AVALANCHE DIODE
This abstract first appeared for US patent application 20250151429 titled 'SINGLE PHOTON AVALANCHE DIODE
Original Abstract Submitted
a single photon avalanche diode may include a first diode, a second diode and a third diode. the first diode includes a first pn junction vertically spaced from a light-receiving surface by a first depth. the second diode is formed to be partially contacted with the first diode. the second diode includes a second pn junction vertically spaced from the light-receiving surface by a second depth greater than the first depth. the third diode is formed to be partially contacted with the second diode. the third diode includes a third pn junction spaced from the light-receiving surface by a third depth greater than the second depth. the first to third diodes include different breakdown voltages.