View source for Samsung electronics co., ltd. (20240120213). SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract

=SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:samsung electronics co., ltd.|samsung electronics co., ltd.]]


[[Category:samsung electronics co., ltd.]]

==Inventor(s)==

[[:Category:Woo Rim Lee of Suwon-si (KR)|Woo Rim Lee of Suwon-si (KR)]][[Category:Woo Rim Lee of Suwon-si (KR)]]

[[:Category:Myoung Jae Seo of Suwon-si (KR)|Myoung Jae Seo of Suwon-si (KR)]][[Category:Myoung Jae Seo of Suwon-si (KR)]]

[[:Category:Sung Gil Kang of Suwon-si (KR)|Sung Gil Kang of Suwon-si (KR)]][[Category:Sung Gil Kang of Suwon-si (KR)]]

[[:Category:Hyun Ho Doh of Suwon-si (KR)|Hyun Ho Doh of Suwon-si (KR)]][[Category:Hyun Ho Doh of Suwon-si (KR)]]

[[:Category:Sung Yong Park of Suwon-si (KR)|Sung Yong Park of Suwon-si (KR)]][[Category:Sung Yong Park of Suwon-si (KR)]]

[[:Category:In Hye Jeong of Suwon-si (KR)|In Hye Jeong of Suwon-si (KR)]][[Category:In Hye Jeong of Suwon-si (KR)]]

==SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240120213 titled 'SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE

==Simplified Explanation==

The method described in the patent application involves processing a semiconductor device by using a substrate processing apparatus and a process etchant generated from a process gas through plasma ignition. The composition rate of the process etchant is identified and used to control the processing of the substrate.

* Loading a substrate into a substrate processing apparatus
* Processing the substrate using a process etchant generated from a process gas through plasma ignition
* Identifying the composition rate of the process etchant
* Controlling the processing of the substrate based on the composition rate of the process etchant

== Potential Applications ==
This technology can be applied in the manufacturing of semiconductor devices, such as integrated circuits, memory chips, and microprocessors.

== Problems Solved ==
This technology helps in improving the precision and efficiency of processing semiconductor devices by accurately controlling the composition rate of the process etchant.

== Benefits ==
The benefits of this technology include enhanced quality control, increased production yield, and reduced manufacturing costs in the semiconductor industry.

== Potential Commercial Applications ==
The potential commercial applications of this technology include semiconductor fabrication facilities, semiconductor equipment manufacturers, and research institutions.

== Possible Prior Art ==
One possible prior art for this technology could be the use of plasma etching processes in semiconductor manufacturing to improve device performance and yield.

== Unanswered Questions ==

=== How does the composition rate of the process etchant affect the processing of the substrate? ===
The composition rate of the process etchant plays a crucial role in determining the etching rate, selectivity, and uniformity of the substrate during processing.

=== What are the specific parameters used to control the processing of the substrate based on the composition rate of the process etchant? ===
The specific parameters could include adjusting the flow rate of the process gas, optimizing the plasma ignition conditions, and monitoring the composition rate in real-time to make necessary adjustments during processing.


==Original Abstract Submitted==

a method of fabricating a semiconductor device is provided. the method includes: loading a substrate into a substrate processing apparatus; and processing the substrate, using the substrate processing apparatus. the processing the substrate includes: providing a process gas; generating a process etchant from the process gas, using plasma ignition, the process etchant including a first etchant and a second etchant; processing the substrate, using the process etchant; identifying a composition rate of the process etchant; and controlling the processing of the substrate based on a process result according to the composition rate of the process etchant.



[[Category:H01L21/67]]
[[Category:H01J37/32]]
[[Category:H01L21/285]]
[[Category:H01L21/3065]]