Samsung electronics co., ltd. (20240120213). SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Myoung Jae Seo of Suwon-si (KR)
Sung Gil Kang of Suwon-si (KR)
Sung Yong Park of Suwon-si (KR)
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120213 titled 'SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the patent application involves processing a semiconductor device by using a substrate processing apparatus and a process etchant generated from a process gas through plasma ignition. The composition rate of the process etchant is identified and used to control the processing of the substrate.
- Loading a substrate into a substrate processing apparatus
- Processing the substrate using a process etchant generated from a process gas through plasma ignition
- Identifying the composition rate of the process etchant
- Controlling the processing of the substrate based on the composition rate of the process etchant
Potential Applications
This technology can be applied in the manufacturing of semiconductor devices, such as integrated circuits, memory chips, and microprocessors.
Problems Solved
This technology helps in improving the precision and efficiency of processing semiconductor devices by accurately controlling the composition rate of the process etchant.
Benefits
The benefits of this technology include enhanced quality control, increased production yield, and reduced manufacturing costs in the semiconductor industry.
Potential Commercial Applications
The potential commercial applications of this technology include semiconductor fabrication facilities, semiconductor equipment manufacturers, and research institutions.
Possible Prior Art
One possible prior art for this technology could be the use of plasma etching processes in semiconductor manufacturing to improve device performance and yield.
Unanswered Questions
How does the composition rate of the process etchant affect the processing of the substrate?
The composition rate of the process etchant plays a crucial role in determining the etching rate, selectivity, and uniformity of the substrate during processing.
What are the specific parameters used to control the processing of the substrate based on the composition rate of the process etchant?
The specific parameters could include adjusting the flow rate of the process gas, optimizing the plasma ignition conditions, and monitoring the composition rate in real-time to make necessary adjustments during processing.
Original Abstract Submitted
a method of fabricating a semiconductor device is provided. the method includes: loading a substrate into a substrate processing apparatus; and processing the substrate, using the substrate processing apparatus. the processing the substrate includes: providing a process gas; generating a process etchant from the process gas, using plasma ignition, the process etchant including a first etchant and a second etchant; processing the substrate, using the process etchant; identifying a composition rate of the process etchant; and controlling the processing of the substrate based on a process result according to the composition rate of the process etchant.
