View source for Robert bosch gmbh (20240136407). VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER simplified abstract

=VERTICAL SEMICONDUCTOR COMPONENT ON THE  BASIS OF  GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER=


==Organization Name==

[[:Category:robert bosch gmbh|robert bosch gmbh]]


[[Category:robert bosch gmbh]]

==Inventor(s)==

[[:Category:Kevin Dannecker of Reutlingen (DE)|Kevin Dannecker of Reutlingen (DE)]][[Category:Kevin Dannecker of Reutlingen (DE)]]

[[:Category:Stefan Regensburger of Renningen (DE)|Stefan Regensburger of Renningen (DE)]][[Category:Stefan Regensburger of Renningen (DE)]]

==VERTICAL SEMICONDUCTOR COMPONENT ON THE  BASIS OF  GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240136407 titled 'VERTICAL SEMICONDUCTOR COMPONENT ON THE  BASIS OF  GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER

==Simplified Explanation==

The abstract describes a vertical semiconductor component, such as a transistor, based on gallium nitride (GaN) with at least two, preferably three, vertically arranged electrodes. The semiconductor layer structure includes a contact semiconductor layer, an intermediate layer for compensating for lattice mismatch, and electrodes.

* The semiconductor component is based on gallium nitride (GaN).
* It has at least two, preferably three, vertically arranged electrodes.
* The semiconductor layer structure includes a contact semiconductor layer and an intermediate layer for compensating for lattice mismatch.
* The electrodes are arranged vertically one above the other.

== Potential Applications ==
This technology could be applied in:
* Power electronics
* RF amplifiers
* LED lighting

== Problems Solved ==
This technology solves issues related to:
* Lattice mismatch between foreign substrates and semiconductor layers
* Vertical integration of semiconductor components

== Benefits ==
The benefits of this technology include:
* Improved performance of semiconductor components
* Enhanced efficiency in power electronics
* Higher reliability in RF amplifiers

== Potential Commercial Applications ==
This technology could be commercially applied in:
* Semiconductor manufacturing
* Electronics industry
* Telecommunications sector

== Possible Prior Art ==
One possible prior art could be the use of vertical semiconductor components in power electronics and RF amplifiers.

== Unanswered Questions ==
1. What specific methods are used to compensate for lattice mismatch in the semiconductor layer structure?
2. How does the vertical arrangement of electrodes improve the performance of the semiconductor component?


==Original Abstract Submitted==

a vertical semiconductor component, in particular transistor, with a semiconductor layer structure for forming a semiconductor component on the basis of gallium nitride (gan) and at least two, preferably three, electrodes arranged vertically one above the other. the semiconductor layer structure includes a contact semiconductor layer contacted by a vertically lower electrode. an intermediate layer for compensating for the lattice mismatch between a non-comprised foreign substrate and the contact semiconductor layer is arranged vertically below the contact semiconductor layer in some regions.



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