View source for International business machines corporation (20240105769). STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH NANOSHEET LOGIC DEVICE simplified abstract

=STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH NANOSHEET LOGIC DEVICE=


==Organization Name==

[[:Category:international business machines corporation|international business machines corporation]]


[[Category:international business machines corporation]]

==Inventor(s)==

[[:Category:Shahab Siddiqui of Clifton Park NY (US)|Shahab Siddiqui of Clifton Park NY (US)]][[Category:Shahab Siddiqui of Clifton Park NY (US)]]

[[:Category:Ruqiang Bao of Niskayuna NY (US)|Ruqiang Bao of Niskayuna NY (US)]][[Category:Ruqiang Bao of Niskayuna NY (US)]]

[[:Category:Charlotte DeWan Adams of Schenectady NY (US)|Charlotte DeWan Adams of Schenectady NY (US)]][[Category:Charlotte DeWan Adams of Schenectady NY (US)]]

[[:Category:Curtis S. Durfee of Schenectady NY (US)|Curtis S. Durfee of Schenectady NY (US)]][[Category:Curtis S. Durfee of Schenectady NY (US)]]

[[:Category:Anthony I. Chou of Guilderland NY (US)|Anthony I. Chou of Guilderland NY (US)]][[Category:Anthony I. Chou of Guilderland NY (US)]]

[[:Category:Barry Paul Linder of Hastings-on-Hudson NY (US)|Barry Paul Linder of Hastings-on-Hudson NY (US)]][[Category:Barry Paul Linder of Hastings-on-Hudson NY (US)]]

[[:Category:Ravikumar Ramachandran of Pleasantville NY (US)|Ravikumar Ramachandran of Pleasantville NY (US)]][[Category:Ravikumar Ramachandran of Pleasantville NY (US)]]

[[:Category:Dechao Guo of Niskayuna NY (US)|Dechao Guo of Niskayuna NY (US)]][[Category:Dechao Guo of Niskayuna NY (US)]]

==STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH NANOSHEET LOGIC DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240105769 titled 'STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH NANOSHEET LOGIC DEVICE

==Simplified Explanation==

The semiconductor device described in the abstract includes a substrate with two regions separated by a space. The first region houses a FinFET-based input/output device, while the second region contains a nanosheet-based logic device.

* The semiconductor device consists of a substrate with distinct regions for different types of semiconductor devices.
* The first region accommodates a FinFET-based input/output device with a gate dielectric.
* The second region hosts a nanosheet-based logic device without a gate dielectric.

== Potential Applications ==
This technology can be applied in:
* High-performance computing
* Mobile devices
* Internet of Things (IoT) devices

== Problems Solved ==
* Integration of different types of semiconductor devices on a single substrate
* Enhanced performance and efficiency in electronic devices

== Benefits ==
* Improved functionality and performance
* Space-saving design
* Increased energy efficiency

== Potential Commercial Applications ==
### Enhancing Electronic Devices with FinFET and Nanosheet Technologies ###

== Possible Prior Art ==
No known prior art at this time.

== Unanswered Questions ==

=== How does the integration of FinFET and nanosheet devices impact overall device performance? ===
The abstract does not provide specific details on the performance implications of combining these two types of semiconductor devices.

=== What are the manufacturing challenges associated with creating a semiconductor device with FinFET and nanosheet technologies on the same substrate? ===
The abstract does not address the potential difficulties or complexities in the manufacturing process of such a semiconductor device.


==Original Abstract Submitted==

a semiconductor device includes a substrate having a first region and a second region separated from the first region by distance to define a space therebetween. a first semiconductor device including a gate dielectric is on the first region. the first semiconductor device can implement a finfet-based input/output (i/o) device in the first region. a second semiconductor device excluding a gate dielectric is on the second region. the second semiconductor device can implement a nanosheet-based logic device in the second region.



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