View source for 20250234619. Power Semiconductor Device Hav (Wolfspeed, .)

= Power Semiconductor Device Having Improved Transient Handling Without Field Insulating Layer =

'''Abstract''':
power semiconductor devices are provided. in one example, a power semiconductor device includes a semiconductor structure. the power semiconductor device further includes a polysilicon gate layer on the semiconductor structure in an inactive region of the semiconductor device. the power semiconductor device further includes a gate insulating pattern between the polysilicon gate layer and the semiconductor structure, the gate insulating pattern having a thickness such that a distance between the semiconductor in the inactive region and the polysilicon gate layer through the gate insulating pattern is less than about 100 nm. the power semiconductor device further includes a shunt contact structure on semiconductor structure in the inactive region. a gate insulating electric field across the gate insulating pattern associated with a displacement current is less than about 8 mv/cm.

'''Inventor(s)''': [[:Category:Edward Robert Van Brunt of Cary NC US|Edward Robert Van Brunt]], [[:Category:Adam Benjamin Barkley of Chapel Hill NC US|Adam Benjamin Barkley]], [[:Category:In-Hwan Ji of Apex NC US|In-Hwan Ji]], [[:Category:Thomas Edgar Harrington, III of Durham NC US|Thomas Edgar Harrington, III]]

'''CPC Classification''': [[:Category:CPC_H10D64/252|H10D64/252]] (No explanation available)


[[Category:Patent Applications]]
[[Category:Wolfspeed, Inc.]]
[[Category:CPC_H10D64/252]]
[[Category:Edward Robert Van Brunt of Cary NC US]]
[[Category:Adam Benjamin Barkley of Chapel Hill NC US]]
[[Category:In-Hwan Ji of Apex NC US]]
[[Category:Thomas Edgar Harrington, III of Durham NC US]]

[https://wikipatents.org/index.php?search=20250234619+rejection&title=Special%3ASearch&wprov=acrw1_-1 Search for rejections for patent application number 20250234619]


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