20250234619. Power Semiconductor Device Hav (Wolfspeed, .)
Power Semiconductor Device Having Improved Transient Handling Without Field Insulating Layer
Abstract: power semiconductor devices are provided. in one example, a power semiconductor device includes a semiconductor structure. the power semiconductor device further includes a polysilicon gate layer on the semiconductor structure in an inactive region of the semiconductor device. the power semiconductor device further includes a gate insulating pattern between the polysilicon gate layer and the semiconductor structure, the gate insulating pattern having a thickness such that a distance between the semiconductor in the inactive region and the polysilicon gate layer through the gate insulating pattern is less than about 100 nm. the power semiconductor device further includes a shunt contact structure on semiconductor structure in the inactive region. a gate insulating electric field across the gate insulating pattern associated with a displacement current is less than about 8 mv/cm.
Inventor(s): Edward Robert Van Brunt, Adam Benjamin Barkley, In-Hwan Ji, Thomas Edgar Harrington, III
CPC Classification: H10D64/252 (No explanation available)
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