View source for 20250218764. Method Manufac (Kokusai Electric)

= METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM =

'''Abstract''':
described herein is a technique capable of selectively forming a thin film on a substrate while suppressing damage to other films of the substrate. according to the technique, there is provided a substrate processing method including: (a) providing a substrate where a first oxide film is removed from a surface thereof by supplying a first inorganic material thereto so as to expose at least a first film containing silicon and a second film different from the first film on the surface of the substrate and a second oxide film is formed on a surface of the first film by supplying an oxidizing agent to the substrate, and modifying the second oxide film formed on the surface of the first film by supplying a second inorganic material to the substrate; and (b) selectively growing a film on a surface of the second film by supplying a deposition gas to the substrate.

'''Inventor(s)''': [[:Category:Hiroshi ASHIHARA of Toyama  JP|Hiroshi ASHIHARA]], [[:Category:Motomu DEGAI of Toyama  JP|Motomu DEGAI]], [[:Category:Takayuki WASEDA of Toyama  JP|Takayuki WASEDA]]

'''CPC Classification''': [[:Category:CPC_H01L21/0217|H01L21/0217]] ({the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz  ( and  take precedence)})


[[Category:Patent Applications]]
[[Category:Kokusai Electric Corporation]]
[[Category:CPC_H01L21/0217]]
[[Category:Hiroshi ASHIHARA of Toyama  JP]]
[[Category:Motomu DEGAI of Toyama  JP]]
[[Category:Takayuki WASEDA of Toyama  JP]]

[https://wikipatents.org/index.php?search=20250218764+rejection&title=Special%3ASearch&wprov=acrw1_-1 Search for rejections for patent application number 20250218764]


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