METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

Abstract: described herein is a technique capable of selectively forming a thin film on a substrate while suppressing damage to other films of the substrate. according to the technique, there is provided a substrate processing method including: (a) providing a substrate where a first oxide film is removed from a surface thereof by supplying a first inorganic material thereto so as to expose at least a first film containing silicon and a second film different from the first film on the surface of the substrate and a second oxide film is formed on a surface of the first film by supplying an oxidizing agent to the substrate, and modifying the second oxide film formed on the surface of the first film by supplying a second inorganic material to the substrate; and (b) selectively growing a film on a surface of the second film by supplying a deposition gas to the substrate.

Inventor(s): Hiroshi ASHIHARA, Motomu DEGAI, Takayuki WASEDA

CPC Classification: H01L21/0217 ({the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz ( and take precedence)})

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