View source for 20250174464. Method Devi (CENTRAL GLASS , LIMITED)

= METHOD AND DEVICE FOR ETCHING SILICON OXIDE =

'''Abstract''':
the method of dry-etching silicon oxide of the present disclosure includes reacting silicon oxide with any one of the following (a) to (c): (a) a gaseous hydrogen fluoride and a gaseous organic amine compound, (b) a gaseous hydrogen fluoride salt of an organic amine compound, and (c) a gaseous hydrogen fluoride, a gaseous organic amine compound, and a gaseous hydrogen fluoride salt of an organic amine compound in a non-plasma state.

'''Inventor(s)''': [[:Category:Shoi SUZUKI of Yamaguchi  JP|Shoi SUZUKI]], [[:Category:Akifumi YAO of Yamaguchi  JP|Akifumi YAO]]

'''CPC Classification''': [[:Category:CPC_H01L21/31116|H01L21/31116]] ({by dry-etching})


[[Category:Patent Applications]]
[[Category:CENTRAL GLASS COMPANY, LIMITED]]
[[Category:CPC_H01L21/31116]]
[[Category:Shoi SUZUKI of Yamaguchi  JP]]
[[Category:Akifumi YAO of Yamaguchi  JP]]

[https://wikipatents.org/index.php?search=20250174464+rejection&title=Special%3ASearch&wprov=acrw1_-1 Search for rejections for patent application number 20250174464]


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