METHOD AND DEVICE FOR ETCHING SILICON OXIDE

Abstract: the method of dry-etching silicon oxide of the present disclosure includes reacting silicon oxide with any one of the following (a) to (c): (a) a gaseous hydrogen fluoride and a gaseous organic amine compound, (b) a gaseous hydrogen fluoride salt of an organic amine compound, and (c) a gaseous hydrogen fluoride, a gaseous organic amine compound, and a gaseous hydrogen fluoride salt of an organic amine compound in a non-plasma state.

Inventor(s): Shoi SUZUKI, Akifumi YAO

CPC Classification: H01L21/31116 ({by dry-etching})

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