View source for 20240047486. SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)

=SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE=


==Organization Name==

[[:Category:SONY SEMICONDUCTOR SOLUTIONS CORPORATION|SONY SEMICONDUCTOR SOLUTIONS CORPORATION]]


[[Category:SONY SEMICONDUCTOR SOLUTIONS CORPORATION]]

==Inventor(s)==

[[:Category:Yuki Kawahara of Kanagawa (JP)|Yuki Kawahara of Kanagawa (JP)]][[Category:Yuki Kawahara of Kanagawa (JP)]]

==SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240047486 titled 'SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE

==Simplified Explanation==

The abstract describes a solid-state imaging device that aims to generate avalanche amplification while maintaining resolution. The device includes a photoelectric conversion region, a first semiconductor region surrounding it, a first contact at the bottom of a trench that contacts the first semiconductor region, a second semiconductor region with the same conductivity type as the first region, a third semiconductor region contacting the second region, and a second contact on the first surface that contacts the third semiconductor region. The heights of the first contact and the third semiconductor region from the first surface are different.

* The patent application describes a solid-state imaging device with a unique structure to achieve avalanche amplification without sacrificing resolution.
* The device includes a photoelectric conversion region, surrounded by a first semiconductor region, which helps in amplifying the signal.
* A first contact is positioned at the bottom of a trench and contacts the first semiconductor region, ensuring efficient signal transfer.
* A second semiconductor region with the same conductivity type as the first region is in contact with the first semiconductor region, aiding in signal amplification.
* A third semiconductor region is positioned between the second semiconductor region and the first surface, and it has a different conductivity type.
* A second contact on the first surface contacts the third semiconductor region, facilitating signal collection.

Potential applications of this technology:

* Solid-state imaging devices with improved signal amplification and resolution could be used in various fields, including digital photography, surveillance systems, medical imaging, and scientific research.
* The technology could enhance the performance of image sensors in smartphones, enabling better low-light photography and improved image quality.

Problems solved by this technology:

* Traditional solid-state imaging devices often face challenges in achieving both high amplification and high resolution simultaneously.
* This technology addresses the issue by introducing a unique structure that allows for avalanche amplification while suppressing a reduction in resolution.

Benefits of this technology:

* The solid-state imaging device described in the patent application offers improved signal amplification, leading to better image quality in low-light conditions.
* By maintaining resolution while achieving avalanche amplification, the device provides enhanced detail and clarity in captured images.
* The technology has the potential to advance the capabilities of various imaging systems, leading to better performance and more accurate results in applications such as photography, surveillance, and medical imaging.


==Original Abstract Submitted==

to stably generate avalanche amplification while suppressing a reduction in resolution. a solid-state imaging device according to an embodiment includes a photoelectric conversion region in an element region defined by a trench in a semiconductor substrate, a first semiconductor region surrounding the photoelectric conversion region, a first contact that contacts the first semiconductor region at a bottom of the trench, a second semiconductor region contacting the first semiconductor region and having a first conductivity type the same as the first semiconductor region, a third semiconductor region that contacts the second semiconductor region, between the second semiconductor region and a first surface, and having a second conductivity type, and a second contact on the first surface and contacting the third semiconductor region, wherein a height of the first contact from the first surface is different from a height of the third semiconductor region from the first surface.



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