20240047486. SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)

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SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE

Organization Name

SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor(s)

Yuki Kawahara of Kanagawa (JP)

SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240047486 titled 'SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE

Simplified Explanation

The abstract describes a solid-state imaging device that aims to generate avalanche amplification while maintaining resolution. The device includes a photoelectric conversion region, a first semiconductor region surrounding it, a first contact at the bottom of a trench that contacts the first semiconductor region, a second semiconductor region with the same conductivity type as the first region, a third semiconductor region contacting the second region, and a second contact on the first surface that contacts the third semiconductor region. The heights of the first contact and the third semiconductor region from the first surface are different.

  • The patent application describes a solid-state imaging device with a unique structure to achieve avalanche amplification without sacrificing resolution.
  • The device includes a photoelectric conversion region, surrounded by a first semiconductor region, which helps in amplifying the signal.
  • A first contact is positioned at the bottom of a trench and contacts the first semiconductor region, ensuring efficient signal transfer.
  • A second semiconductor region with the same conductivity type as the first region is in contact with the first semiconductor region, aiding in signal amplification.
  • A third semiconductor region is positioned between the second semiconductor region and the first surface, and it has a different conductivity type.
  • A second contact on the first surface contacts the third semiconductor region, facilitating signal collection.

Potential applications of this technology:

  • Solid-state imaging devices with improved signal amplification and resolution could be used in various fields, including digital photography, surveillance systems, medical imaging, and scientific research.
  • The technology could enhance the performance of image sensors in smartphones, enabling better low-light photography and improved image quality.

Problems solved by this technology:

  • Traditional solid-state imaging devices often face challenges in achieving both high amplification and high resolution simultaneously.
  • This technology addresses the issue by introducing a unique structure that allows for avalanche amplification while suppressing a reduction in resolution.

Benefits of this technology:

  • The solid-state imaging device described in the patent application offers improved signal amplification, leading to better image quality in low-light conditions.
  • By maintaining resolution while achieving avalanche amplification, the device provides enhanced detail and clarity in captured images.
  • The technology has the potential to advance the capabilities of various imaging systems, leading to better performance and more accurate results in applications such as photography, surveillance, and medical imaging.


Original Abstract Submitted

to stably generate avalanche amplification while suppressing a reduction in resolution. a solid-state imaging device according to an embodiment includes a photoelectric conversion region in an element region defined by a trench in a semiconductor substrate, a first semiconductor region surrounding the photoelectric conversion region, a first contact that contacts the first semiconductor region at a bottom of the trench, a second semiconductor region contacting the first semiconductor region and having a first conductivity type the same as the first semiconductor region, a third semiconductor region that contacts the second semiconductor region, between the second semiconductor region and a first surface, and having a second conductivity type, and a second contact on the first surface and contacting the third semiconductor region, wherein a height of the first contact from the first surface is different from a height of the third semiconductor region from the first surface.

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