View source for 18987002. SiC EPITAXIAL WAFER (Resonac Corporation)

=SiC EPITAXIAL WAFER=


==Organization Name==

[[:Category:Resonac Corporation|Resonac Corporation]]


[[Category:Resonac Corporation]]

==Inventor(s)==

[[:Category:Hiromasa Suo of Toyota JP|Hiromasa Suo of Toyota JP]][[Category:Hiromasa Suo of Toyota JP]]

[[:Category:Rimpei Kindaichi of Tokyo JP|Rimpei Kindaichi of Tokyo JP]][[Category:Rimpei Kindaichi of Tokyo JP]]

[[:Category:Tamotsu Yamashita of Tokyo JP|Tamotsu Yamashita of Tokyo JP]][[Category:Tamotsu Yamashita of Tokyo JP]]

==SiC EPITAXIAL WAFER==


This abstract first appeared for US patent application 18987002 titled 'SiC EPITAXIAL WAFER

==Original Abstract Submitted==

A SiC epitaxial wafer including: a SiC substrate; and a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein a diameter of the SiC substrate is 195 mm or more, and a warp is 50 μm or less.



[[Category:C30B29/36]]
[[Category:C30B25/20]]
[[Category:CPC_C30B29/36]]