View source for 18923921. FILM FORMING METHOD AND PROCESSING SYSTEM (Tokyo Electron Limited)

=FILM FORMING METHOD AND PROCESSING SYSTEM=


==Organization Name==

[[:Category:Tokyo Electron Limited|Tokyo Electron Limited]]


[[Category:Tokyo Electron Limited]]

==Inventor(s)==

[[:Category:Shinya Okabe of Nirasaki City JP|Shinya Okabe of Nirasaki City JP]][[Category:Shinya Okabe of Nirasaki City JP]]

[[:Category:Atsushi Matsumoto of Nirasaki City JP|Atsushi Matsumoto of Nirasaki City JP]][[Category:Atsushi Matsumoto of Nirasaki City JP]]

[[:Category:Toshiaki Arima of Nirasaki City JP|Toshiaki Arima of Nirasaki City JP]][[Category:Toshiaki Arima of Nirasaki City JP]]

==FILM FORMING METHOD AND PROCESSING SYSTEM==


This abstract first appeared for US patent application 18923921 titled 'FILM FORMING METHOD AND PROCESSING SYSTEM

==Original Abstract Submitted==

A film forming method includes: (a) preparing a substrate having a doped region, which contains silicon with an added impurity, formed on a surface; (b) forming a diffusion prevention layer, which contains the impurity, on the doped region; and (c) forming a metal film on the doped region where the diffusion prevention layer is formed, and forming a metal silicide film by a reaction between the metal film and the silicon of the doped region, wherein (b) includes supplying an impurity-containing gas that contains the impurity to the substrate without converting the impurity-containing gas into a plasma.



[[Category:H01L21/3205]]
[[Category:C23C16/52]]
[[Category:H01L21/02]]
[[Category:CPC_H01L21/32053]]