18923921. FILM FORMING METHOD AND PROCESSING SYSTEM (Tokyo Electron Limited)
FILM FORMING METHOD AND PROCESSING SYSTEM
Organization Name
Inventor(s)
Shinya Okabe of Nirasaki City JP
Atsushi Matsumoto of Nirasaki City JP
Toshiaki Arima of Nirasaki City JP
FILM FORMING METHOD AND PROCESSING SYSTEM
This abstract first appeared for US patent application 18923921 titled 'FILM FORMING METHOD AND PROCESSING SYSTEM
Original Abstract Submitted
A film forming method includes: (a) preparing a substrate having a doped region, which contains silicon with an added impurity, formed on a surface; (b) forming a diffusion prevention layer, which contains the impurity, on the doped region; and (c) forming a metal film on the doped region where the diffusion prevention layer is formed, and forming a metal silicide film by a reaction between the metal film and the silicon of the doped region, wherein (b) includes supplying an impurity-containing gas that contains the impurity to the substrate without converting the impurity-containing gas into a plasma.