View source for 18905487. METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR (STMicroelectronics International N.V.)

=METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR=


==Organization Name==

[[:Category:STMicroelectronics International N.V.|STMicroelectronics International N.V.]]


[[Category:STMicroelectronics International N.V.]]

==Inventor(s)==

[[:Category:Arnaud Rival of Saint Nazaire les Eymes FR|Arnaud Rival of Saint Nazaire les Eymes FR]][[Category:Arnaud Rival of Saint Nazaire les Eymes FR]]

[[:Category:Alexis Gauthier of Meylan FR|Alexis Gauthier of Meylan FR]][[Category:Alexis Gauthier of Meylan FR]]

[[:Category:Edoardo Brezza of Casale Monferrato IT|Edoardo Brezza of Casale Monferrato IT]][[Category:Edoardo Brezza of Casale Monferrato IT]]

[[:Category:Pascal Chevalier of Chapareillan FR|Pascal Chevalier of Chapareillan FR]][[Category:Pascal Chevalier of Chapareillan FR]]

==METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR==


This abstract first appeared for US patent application 18905487 titled 'METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR

==Original Abstract Submitted==

A method of making a bipolar transistor includes: forming a first collector part of a first conductivity type in a semiconductor layer; forming a first insulating region made of a first insulating material on the first collector part; forming a conduction layer intended to form a first doped base part of the second conductivity type on the first insulating region; forming an opening having a first width in the conduction layer that emerges onto the first insulating region; forming an insulating layer on the conduction layer and in the opening; forming a cavity in the insulating layer and in the first insulating region that emerges onto a portion of the first collector part through the opening, the cavity having at the level of the opening a second width smaller than the first width; and forming a second collector part in the cavity on the portion of the first collector part.



[[Category:H01L29/735]]
[[Category:H01L29/08]]
[[Category:H01L29/10]]
[[Category:H01L29/66]]
[[Category:H01L29/737]]
[[Category:CPC_H10D10/60]]