View source for 18899327. 3D Memory Mold Film Stack (Applied Materials, Inc.)

=3D Memory Mold Film Stack=


==Organization Name==

[[:Category:Applied Materials, Inc.|Applied Materials, Inc.]]


[[Category:Applied Materials, Inc.]]

==Inventor(s)==

[[:Category:Ruiying Hao of Santa Clara CA US|Ruiying Hao of Santa Clara CA US]][[Category:Ruiying Hao of Santa Clara CA US]]

[[:Category:Fredrick David Fishburn of Aptos CA US|Fredrick David Fishburn of Aptos CA US]][[Category:Fredrick David Fishburn of Aptos CA US]]

[[:Category:Raghuveer Satya Makala of Campbell CA US|Raghuveer Satya Makala of Campbell CA US]][[Category:Raghuveer Satya Makala of Campbell CA US]]

[[:Category:Thomas John Kirschenheiter of Tempe AZ US|Thomas John Kirschenheiter of Tempe AZ US]][[Category:Thomas John Kirschenheiter of Tempe AZ US]]

[[:Category:Balasubramanian Pranatharthiharan of San Jose CA US|Balasubramanian Pranatharthiharan of San Jose CA US]][[Category:Balasubramanian Pranatharthiharan of San Jose CA US]]

==3D Memory Mold Film Stack==


This abstract first appeared for US patent application 18899327 titled '3D Memory Mold Film Stack

==Original Abstract Submitted==

Three-dimensional (3D) memory structures and methods of formation of same are provided herein. In some embodiments, a 3D memory fabrication structure includes: a base silicon (Si) layer; a silicon germanium (SiGe) layer disposed above the base Si layer; and a doped silicon (Si) layer disposed on at least one side of the SiGe layer, wherein the doped Si layer contains a dopant that is at least one of carbon (C) or boron (B).



[[Category:H01L29/775]]
[[Category:H01L21/02]]
[[Category:H01L29/423]]
[[Category:H01L29/66]]
[[Category:H01L29/786]]
[[Category:CPC_H10D30/43]]