View source for 18810030. SEMICONDUCTOR DEVICE (Mitsubishi Electric Corporation)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:Mitsubishi Electric Corporation|Mitsubishi Electric Corporation]]


[[Category:Mitsubishi Electric Corporation]]

==Inventor(s)==

[[:Category:Tetsuya Higashi of Tokyo JP|Tetsuya Higashi of Tokyo JP]][[Category:Tetsuya Higashi of Tokyo JP]]

[[:Category:Kazuya Konishi of Tokyo JP|Kazuya Konishi of Tokyo JP]][[Category:Kazuya Konishi of Tokyo JP]]

[[:Category:Kakeru Otsuka of Tokyo JP|Kakeru Otsuka of Tokyo JP]][[Category:Kakeru Otsuka of Tokyo JP]]

==SEMICONDUCTOR DEVICE==


This abstract first appeared for US patent application 18810030 titled 'SEMICONDUCTOR DEVICE

==Original Abstract Submitted==

A semiconductor device includes a semiconductor substrate on which a plurality of trenches are formed, an interlayer insulating film formed on the semiconductor substrate, a contact hole made in the interlayer insulating film, and an electrode connected to a semiconductor mesa portion that is a portion between the trenches of the semiconductor substrate through the contact hole. A side wall of the contact hole has a stepped shape having at least one step. A bottom of the contact hole is located on the semiconductor mesa portion, and an upper end of the contact hole is located outside the semiconductor mesa portion.



[[Category:H01L27/06]]
[[Category:H01L29/06]]
[[Category:H01L29/08]]
[[Category:H01L29/417]]
[[Category:H01L29/66]]
[[Category:H01L29/739]]
[[Category:H01L29/861]]
[[Category:CPC_H10D84/617]]