View source for 18532619. Trench FET Device and Method of Manufacturing Trench FET Device simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)

=Trench FET Device and Method of Manufacturing Trench FET Device=


==Organization Name==

[[:Category:HUAWEI TECHNOLOGIES CO., LTD.|HUAWEI TECHNOLOGIES CO., LTD.]]


[[Category:HUAWEI TECHNOLOGIES CO., LTD.]]

==Inventor(s)==

[[:Category:Mo huai Chang of Nuremberg (DE)|Mo huai Chang of Nuremberg (DE)]][[Category:Mo huai Chang of Nuremberg (DE)]]

[[:Category:Junqing He of Dongguan (CN)|Junqing He of Dongguan (CN)]][[Category:Junqing He of Dongguan (CN)]]

==Trench FET Device and Method of Manufacturing Trench FET Device - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18532619 titled 'Trench FET Device and Method of Manufacturing Trench FET Device

==Simplified Explanation==

The trench field-effect transistor (FET) device described in the patent application includes active trenches with gate and shield electrodes, as well as termination trenches filled with dielectric material.

* Active trenches with gate and shield electrodes
* Termination trenches filled with dielectric material
* Trenches distributed along two axes
* Shield electrodes abut termination trenches at each end

== Potential Applications ==
The technology described in the patent application could be applied in:
* Power electronics
* Renewable energy systems
* Electric vehicles

== Problems Solved ==
This technology helps to:
* Improve power efficiency
* Enhance switching speed
* Reduce heat generation

== Benefits ==
The benefits of this technology include:
* Higher performance
* Increased reliability
* Lower power consumption

== Potential Commercial Applications ==
This technology could be utilized in:
* Semiconductor manufacturing
* Power supply systems
* Electric motor control

== Possible Prior Art ==
One possible prior art for this technology could be the use of trench FET devices in power electronics applications.

=== Unanswered Questions ===

=== How does this technology compare to traditional FET devices in terms of performance and efficiency? ===
The article does not provide a direct comparison between this technology and traditional FET devices. Further research or testing may be needed to determine the specific advantages of this innovation.

=== What are the potential challenges in scaling up the production of trench FET devices for commercial use? ===
The article does not address the scalability of production for this technology. Understanding the challenges and limitations in mass production could be crucial for its successful commercialization.


==Original Abstract Submitted==

A trench field-effect transistor (FET) device includes a plurality of active trenches extending along a first axis and distributed along a second axis perpendicular to the first axis. Each active trench includes a gate electrode and a shield electrode. The trench FET device further includes a plurality of termination trenches fully filled with a dielectric material, extending along the second axis, and arranged adjacent to the active trenches. In addition, the shield electrode of each of the active trenches abuts a respective one of the plurality of termination trenches at each end.



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